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Freescale Semiconductor
RF Product Device Data
MRF9120LR3
WB1
WB2
WB4
WB3
Balun1
Balun2
CUTOUT AREA
C30
B3
R1
MRF9120
900 MHz
PUSH PULL
Rev 01B
B4
C10
C8
C2
C3
C1
C5
C6
R2
C7
C9
B1
B2
C29
C27
VDD
C25
C26
C21
C11
B6
L1
C13-C15
L2
C12
C22
B5
C23
C24
C28
VDD
C20
C16
C17
C19
C4
C18
Figure 2. 865-895 MHz Broadband Test Circuit Component Layout
VGG
VGG
INPUT
OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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相关代理商/技术参数
MRF9120LR5
功能描述:射频MOSFET电源晶体管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9120R3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9130L
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9130LR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9130LSR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9135L
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9135LR3
功能描述:射频MOSFET电源晶体管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9135LR5
功能描述:射频MOSFET电源晶体管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray